ZTX855
TRANS NPN 150V 4A E-LINEManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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The Diodes Incorporated ZTX855 is an NPN bipolar junction transistor (BJT) designed for through-hole mounting. This component features a collector-emitter breakdown voltage of 150V and a maximum continuous collector current of 4A. With a power dissipation of 1.2W and a transition frequency of 90MHz, the ZTX855 is suitable for power switching and amplification applications. The minimum DC current gain (hFE) is 100 at 1A and 5V, and the Vce saturation is a maximum of 260mV at 400mA and 4A. The device operates across a wide temperature range of -55°C to 200°C. This transistor is packaged in an E-Line format, compatible with TO-92 footprints, and is supplied in bulk. It finds application in various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | E-Line-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 260mV @ 400mA, 4A |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 5V |
| Frequency - Transition | 90MHz |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 1.2 W |
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