ZTX853STOB
TRANS NPN 100V 4A E-LINEManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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The Diodes Incorporated ZTX853STOB is an NPN bipolar junction transistor designed for through-hole mounting in an E-Line (TO-92 compatible) package. This device offers a collector-emitter breakdown voltage of 100V and a continuous collector current capability of 4A. Key parameters include a minimum DC current gain (hFE) of 100 at 2A and 2V, and a transition frequency of 130MHz. The transistor exhibits a maximum saturation voltage of 200mV at 400mA collector current and the corresponding base current. With a maximum power dissipation of 1.2W, it is suitable for applications operating within a junction temperature range of -55°C to 200°C. The component is supplied in Tape & Reel packaging. This device finds utility in various industrial and consumer electronics applications requiring robust switching and amplification capabilities.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | E-Line-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 400mA, 4A |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A, 2V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1.2 W |
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