ZTX853QSTZ
PWR MID PERF TRANSISTOR EP3 AMMOManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated ZTX853QSTZ is an NPN bipolar junction transistor (BJT) offering a 100V collector-emitter breakdown voltage and a continuous collector current capability of 4A. This through-hole component features a transition frequency of 130MHz and a maximum power dissipation of 1.2W. The device exhibits a minimum DC current gain (hFE) of 100 at 2A collector current and 2V collector-emitter voltage. Saturation voltage (Vce(sat)) is specified at a maximum of 200mV for a 400mA base current and 4A collector current. Its E-Line package, compatible with TO-92 footprints, is supplied in Tape & Box packaging. The ZTX853QSTZ is suitable for applications in power management and general-purpose amplification across various industrial sectors. Operating junction temperature range is -55°C to 200°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | E-Line-3, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 400mA, 4A |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A, 2V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1.2 W |
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