ZTX851STOB
TRANS NPN 60V 5A E-LINEManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated ZTX851STOB is a high-performance NPN bipolar junction transistor (BJT) designed for robust power switching and amplification applications. This through-hole component features a collector-emitter breakdown voltage of 60 V and a continuous collector current capability of up to 5 A. With a maximum power dissipation of 1.2 W and a transition frequency of 130 MHz, it offers efficient operation in demanding environments. The ZTX851STOB is supplied in an E-Line package, compatible with TO-92 footprints, and is available on tape and reel for automated assembly. Its low Vce saturation of 250 mV at 200 mA and 5 A, coupled with a minimum DC current gain (hFE) of 100 at 2 A and 1 V, makes it suitable for power management, motor control, and general-purpose switching circuits across various industrial sectors. The operating junction temperature range is -55°C to 200°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | E-Line-3, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 200mA, 5A |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A, 1V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1.2 W |
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