ZTX849STOB
TRANS NPN 30V 5A E-LINEManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated ZTX849STOB is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This device features a 30V collector-emitter breakdown voltage and a continuous collector current capability of 5A. The ZTX849STOB offers a minimum DC current gain (hFE) of 100 at 1A and 1V, with a transition frequency of 100MHz, making it suitable for moderate frequency circuits. It is packaged in an E-Line (TO-92 compatible) through-hole format, supplied on tape and reel. The maximum power dissipation is 1.2W, and it operates within an extended junction temperature range of -55°C to 200°C. Typical applications include power switching, voltage regulation, and audio amplification stages in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | E-Line-3, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 220mV @ 200mA, 5A |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 1.2 W |
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