ZTX849STOA
TRANS NPN 30V 5A E-LINEManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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The Diodes Incorporated ZTX849STOA is an NPN bipolar junction transistor designed for high-performance applications. This component features a collector-emitter breakdown voltage of 30V and a continuous collector current capability of 5A, making it suitable for power switching and amplification tasks. With a transition frequency of 100MHz and a maximum power dissipation of 1.2W, it offers efficient operation. The minimum DC current gain (hFE) is 100 at 1A and 1V. The transistor exhibits a Vce(sat) of 220mV at 200mA/5A. Packaged in an E-Line (TO-92 compatible) format and supplied on tape and reel, the ZTX849STOA is ideal for through-hole mounting. Its operating temperature range is -55°C to 200°C. This device finds application in various industrial and consumer electronics sectors requiring robust transistor performance.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | E-Line-3, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 220mV @ 200mA, 5A |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 1.2 W |
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