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ZTX758STZ

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ZTX758STZ

TRANS PNP 400V 0.5A E-LINE

Manufacturer: Diodes Incorporated

Categories: Single Bipolar Transistors

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Diodes Incorporated ZTX758STZ is a PNP bipolar junction transistor (BJT) designed for demanding applications. This device features a maximum collector-emitter breakdown voltage of 400V and a continuous collector current (Ic) capability of 500mA. With a power dissipation of 1W and a transition frequency of 50MHz, it offers robust performance. The ZTX758STZ exhibits a minimum DC current gain (hFE) of 40 at 200mA collector current and 10V Vce. Saturation voltage (Vce(sat)) is specified at a maximum of 500mV at 10mA base current and 100mA collector current, with a collector cutoff current (Icbo) of 100nA. This transistor is housed in an E-Line package, compatible with TO-92 footprints, and is available in Tape & Box (TB) packaging. Its operating temperature range is -55°C to 200°C (TJ). This component is commonly utilized in power supply regulation, general-purpose amplification, and switching circuits across various industrial sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Tape & Box (TB)Datasheet:
Technical Details:
PackagingTape & Box (TB)
Package / CaseE-Line-3, Formed Leads
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 10mA, 100mA
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 200mA, 10V
Frequency - Transition50MHz
Supplier Device PackageE-Line (TO-92 compatible)
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)400 V
Power - Max1 W

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