ZTX755
TRANS PNP 150V 1A E-LINEManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated ZTX755 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component, packaged in an E-Line (TO-92 compatible) format, offers a maximum collector-emitter breakdown voltage (Vce) of 150V and a continuous collector current (Ic) capability of 1A. With a transition frequency (fT) of 30MHz and a power dissipation of 1W, the ZTX755 exhibits a minimum DC current gain (hFE) of 50 at 500mA collector current and 5V Vce. Saturation voltage (Vce(sat)) is specified at 500mV maximum for 200mA base current and 1A collector current. The device operates within a junction temperature range of -55°C to 200°C, with a maximum collector cutoff current (Icbo) of 100nA. This component is suitable for use in industrial, consumer electronics, and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | E-Line-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 500mA, 5V |
| Frequency - Transition | 30MHz |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 1 W |
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