ZTX753QSTZ
PWR MID PERF TRANSISTOR EP3 AMMOManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated ZTX753QSTZ is a PNP bipolar junction transistor (BJT) designed for demanding applications. This through-hole component features a 100V collector-emitter breakdown voltage and a maximum collector current of 2A, making it suitable for power amplification and switching tasks. With a transition frequency of 140MHz and a power dissipation of 1W, the ZTX753QSTZ is engineered for performance in various electronic systems. The device operates within a temperature range of -55°C to 200°C (TJ) and is packaged in an E-Line (TO-92 compatible) format, supplied on Tape & Box (TB). This transistor is commonly utilized in industrial automation, consumer electronics, and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | E-Line-3, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | 140MHz |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
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