ZTX751QSTZ
PWR MID PERF TRANSISTOR EP3 AMMOManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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The Diodes Incorporated ZTX751QSTZ is a PNP bipolar junction transistor (BJT) designed for high-performance applications. Featuring a 60V collector-emitter breakdown voltage and a maximum collector current of 2A, this component offers a transition frequency of 140MHz and a power dissipation of 1W. The ZTX751QSTZ boasts a minimum DC current gain (hFE) of 100 at 500mA and 2V, with a Vce(sat) of 500mV at 200mA and 2A. Its low collector cutoff current is rated at 100nA (ICBO). Packaged in an E-Line (TO-92 compatible) format, suitable for through-hole mounting, this AEC-Q101 qualified device operates across a wide temperature range of -55°C to 200°C. It is available in Tape & Box packaging. This component is utilized in demanding automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | E-Line-3, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 2V |
| Frequency - Transition | 140MHz |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1 W |
| Qualification | AEC-Q101 |
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