ZTX696BSTZ
TRANS NPN 180V 0.5A E-LINEManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated ZTX696BSTZ is an NPN bipolar junction transistor (BJT) designed for through-hole mounting. This component features a collector-emitter breakdown voltage of 180V and a continuous collector current capability of 500mA. With a transition frequency of 70MHz and a maximum power dissipation of 1W, it is suitable for applications requiring moderate switching speeds and power handling. The DC current gain (hFE) is a minimum of 150 at 200mA and 5V, with a saturation voltage of 250mV at 5mA and 200mA. The transistor is housed in an E-Line package, compatible with TO-92 footprints, and supplied in Tape & Box packaging. This device finds application in various industrial control systems and general-purpose amplification circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | E-Line-3, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 200mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 200mA, 5V |
| Frequency - Transition | 70MHz |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 180 V |
| Power - Max | 1 W |
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