ZTX688B
TRANS NPN 12V 3A E-LINEManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated ZTX688B is an NPN bipolar junction transistor (BJT) designed for through-hole mounting in E-Line packages, compatible with TO-92 footprints. This device features a collector-emitter breakdown voltage of 12V and a continuous collector current capability of up to 3A. With a transition frequency of 150MHz, it offers a minimum DC current gain (hFE) of 500 at 100mA and 2V. The collector saturation voltage (Vce(sat)) is specified at a maximum of 350mV with a base current of 20mA and collector current of 3A. The maximum power dissipation is 1W, and it operates across an extended temperature range of -55°C to 200°C (junction temperature). Industries utilizing this component include general-purpose switching and amplification applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | E-Line-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 20mA, 3A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 500 @ 100mA, 2V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
| Power - Max | 1 W |
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