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ZTX658STOB

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ZTX658STOB

TRANS NPN 400V 0.5A E-LINE

Manufacturer: Diodes Incorporated

Categories: Single Bipolar Transistors

Quality Control: Learn More

Diodes Incorporated ZTX658STOB is an NPN bipolar junction transistor (BJT) designed for through-hole mounting in an E-Line (TO-92 compatible) package. This component offers a maximum collector-emitter breakdown voltage of 400 V and a continuous collector current capability of 500 mA. It features a transition frequency of 50 MHz and a maximum power dissipation of 1 W. The transistor exhibits a minimum DC current gain (hFE) of 50 at 100 mA collector current and 5 V collector-emitter voltage, with a typical Vce (sat) of 500 mV at 10 mA base current and 100 mA collector current. The collector cutoff current (ICBO) is specified at a maximum of 100 nA. Operating temperature range is from -55°C to 200°C (junction temperature). This device is frequently employed in power switching and amplification circuits across various industrial and consumer electronics applications. It is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseE-Line-3, Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 10mA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 100mA, 5V
Frequency - Transition50MHz
Supplier Device PackageE-Line (TO-92 compatible)
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)400 V
Power - Max1 W

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