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ZTX658STOA

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ZTX658STOA

TRANS NPN 400V 0.5A E-LINE

Manufacturer: Diodes Incorporated

Categories: Single Bipolar Transistors

Quality Control: Learn More

Diodes Incorporated ZTX658STOA is an NPN bipolar junction transistor designed for applications requiring robust voltage handling and moderate current capabilities. This component features a collector-emitter breakdown voltage of 400V and a maximum continuous collector current of 500mA. With a power dissipation rating of 1W and a transition frequency of 50MHz, it is suitable for various switching and amplification tasks. The device exhibits a minimum DC current gain (hFE) of 50 at 100mA collector current and 5V collector-emitter voltage. Saturation voltage (Vce(sat)) is specified at a maximum of 500mV when driven by 10mA base current for 100mA collector current. The ZTX658STOA is housed in an E-Line (TO-92 compatible) package with formed leads for through-hole mounting and is supplied on tape and reel. Its operating junction temperature range is -55°C to 200°C, making it applicable in industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseE-Line-3, Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 10mA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 100mA, 5V
Frequency - Transition50MHz
Supplier Device PackageE-Line (TO-92 compatible)
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)400 V
Power - Max1 W

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