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ZTX658QSTZ

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ZTX658QSTZ

TRANS NPN 400V 0.5A E-LINE

Manufacturer: Diodes Incorporated

Categories: Single Bipolar Transistors

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The Diodes Incorporated ZTX658QSTZ is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component features a collector-emitter breakdown voltage of 400V and a continuous collector current capability of 500mA. With a transition frequency of 50MHz and a maximum power dissipation of 1W, it is suitable for use in power supply regulation, motor control, and lighting control circuits. The device exhibits a minimum DC current gain (hFE) of 50 at 100mA and 5V, and a Vce saturation of 500mV at 10mA base current and 100mA collector current. The E-Line package, compatible with TO-92 form factors, is supplied in tape and box packaging. The operating junction temperature range is -55°C to 200°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: Tape & Box (TB)
Technical Details:
PackagingTape & Box (TB)
Package / CaseE-Line-3, Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 10mA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 100mA, 5V
Frequency - Transition50MHz
Supplier Device PackageE-Line (TO-92 compatible)
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)400 V
Power - Max1 W

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