ZTX658QSTZ
TRANS NPN 400V 0.5A E-LINEManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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The Diodes Incorporated ZTX658QSTZ is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component features a collector-emitter breakdown voltage of 400V and a continuous collector current capability of 500mA. With a transition frequency of 50MHz and a maximum power dissipation of 1W, it is suitable for use in power supply regulation, motor control, and lighting control circuits. The device exhibits a minimum DC current gain (hFE) of 50 at 100mA and 5V, and a Vce saturation of 500mV at 10mA base current and 100mA collector current. The E-Line package, compatible with TO-92 form factors, is supplied in tape and box packaging. The operating junction temperature range is -55°C to 200°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | E-Line-3, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 100mA, 5V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 1 W |
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