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ZTX657STZ

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ZTX657STZ

TRANS NPN 300V 0.5A E-LINE

Manufacturer: Diodes Incorporated

Categories: Single Bipolar Transistors

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Diodes Incorporated ZTX657STZ is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component features a collector-emitter breakdown voltage of 300V and a continuous collector current capability of 500mA. With a transition frequency of 30MHz and a minimum DC current gain (hFE) of 50 at 100mA and 5V, it offers robust performance for various demanding electronic designs. The device dissipates a maximum power of 1W and operates within an extended temperature range of -55°C to 200°C. Its E-Line package, compatible with TO-92 footprints, facilitates easy integration into existing circuit board layouts. Applications include power supply circuits, lighting control, and general amplification stages in industrial and consumer electronics. The ZTX657STZ is supplied in Tape & Box (TB) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: Last Time BuyPackaging: Tape & Box (TB)
Technical Details:
PackagingTape & Box (TB)
Package / CaseE-Line-3, Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 10mA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 100mA, 5V
Frequency - Transition30MHz
Supplier Device PackageE-Line (TO-92 compatible)
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)300 V
Power - Max1 W

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