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ZTX657STOA

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ZTX657STOA

TRANS NPN 300V 0.5A E-LINE

Manufacturer: Diodes Incorporated

Categories: Single Bipolar Transistors

Quality Control: Learn More

Diodes Incorporated ZTX657STOA is an NPN bipolar junction transistor (BJT) designed for through-hole mounting in E-Line (TO-92 compatible) packaging. This component features a maximum collector-emitter breakdown voltage of 300V and can handle a continuous collector current of up to 500mA. With a maximum power dissipation of 1W, it offers a transition frequency of 30MHz. The ZTX657STOA exhibits a minimum DC current gain (hFE) of 50 at 100mA and 5V. Its collector cutoff current (ICBO) is a maximum of 100nA. The saturation voltage (Vce(sat)) is specified at a maximum of 500mV with a base current of 10mA and collector current of 100mA. This device operates across a temperature range of -55°C to 200°C. The ZTX657STOA is commonly utilized in power supply circuits, general-purpose amplification, and switching applications across industrial and consumer electronics sectors. It is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseE-Line-3, Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 10mA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 100mA, 5V
Frequency - Transition30MHz
Supplier Device PackageE-Line (TO-92 compatible)
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)300 V
Power - Max1 W

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