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ZTX653QSTZ

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ZTX653QSTZ

PWR MID PERF TRANSISTOR EP3 AMMO

Manufacturer: Diodes Incorporated

Categories: Single Bipolar Transistors

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Diodes Incorporated ZTX653QSTZ is a high-performance NPN bipolar junction transistor. This through-hole component, housed in an E-Line (TO-92 compatible) package, offers a collector-emitter breakdown voltage of 100 V and a continuous collector current capability of 2 A. It features a transition frequency of 175 MHz and a maximum power dissipation of 1 W. Saturation voltage is specified at 500 mV at 200 mA collector current and 2 A collector current. The ZTX653QSTZ is suitable for applications in industrial and consumer electronics requiring reliable switching and amplification. Packaging is supplied on Tape & Box (TB).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: Tape & Box (TB)Datasheet:
Technical Details:
PackagingTape & Box (TB)
Package / CaseE-Line-3, Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 200mA, 2A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce-
Frequency - Transition175MHz
Supplier Device PackageE-Line (TO-92 compatible)
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max1 W

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