ZTX653QSTZ
PWR MID PERF TRANSISTOR EP3 AMMOManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated ZTX653QSTZ is a high-performance NPN bipolar junction transistor. This through-hole component, housed in an E-Line (TO-92 compatible) package, offers a collector-emitter breakdown voltage of 100 V and a continuous collector current capability of 2 A. It features a transition frequency of 175 MHz and a maximum power dissipation of 1 W. Saturation voltage is specified at 500 mV at 200 mA collector current and 2 A collector current. The ZTX653QSTZ is suitable for applications in industrial and consumer electronics requiring reliable switching and amplification. Packaging is supplied on Tape & Box (TB).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | E-Line-3, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | 175MHz |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
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