ZTX651STOB
TRANS NPN 60V 2A E-LINEManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated ZTX651STOB is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 60V and a continuous collector current capability of 2A, making it suitable for power handling requirements in various industrial and consumer electronics. The ZTX651STOB exhibits a transition frequency of 175MHz, indicating its suitability for moderate frequency operations. Its maximum power dissipation is rated at 1W. The device is housed in an E-Line package, compatible with TO-92 form factors, and offered in Tape & Reel packaging for efficient automated assembly. Operating temperature range is -55°C to 200°C (TJ). Saturation voltage at 2A collector current and 200mA base current is a maximum of 500mV.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | E-Line-3, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | 175MHz |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1 W |