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ZTX651QSTZ

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ZTX651QSTZ

PWR MID PERF TRANSISTOR EP3 AMMO

Manufacturer: Diodes Incorporated

Categories: Single Bipolar Transistors

Quality Control: Learn More

Diodes Incorporated NPN Bipolar Transistor, part number ZTX651QSTZ. This through-hole device offers a 60V collector-emitter breakdown voltage and a maximum collector current of 2A. With a transition frequency of 175MHz and a power dissipation of 1.5W, it features a minimum DC current gain (hFE) of 100 at 500mA and 2V. The saturation voltage (Vce(sat)) is a maximum of 500mV at 200mA collector current. This component is AEC-Q101 qualified and operates within an extended temperature range of -55°C to 200°C. Packaged in an E-Line (TO-92 compatible) form factor, it is supplied in Tape & Box (TB) packaging. It is commonly utilized in automotive applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: Tape & Box (TB)Datasheet:
Technical Details:
PackagingTape & Box (TB)
Package / CaseE-Line-3, Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 200mA, 2A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 500mA, 2V
Frequency - Transition175MHz
Supplier Device PackageE-Line (TO-92 compatible)
GradeAutomotive
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max1.5 W
QualificationAEC-Q101

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