ZTX649STOA
TRANS NPN 25V 2A E-LINEManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated ZTX649STOA is an NPN bipolar junction transistor (BJT) designed for through-hole mounting in E-Line packages, compatible with TO-92 footprints. This component offers a collector-emitter breakdown voltage of 25V and a continuous collector current capability of up to 2A. It features a maximum power dissipation of 1W and a transition frequency of 240MHz. Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 1A collector current and 2V collector-emitter voltage, with a saturation voltage (Vce(sat)) of 500mV at 200mA base current and 2A collector current. The collector cutoff current (ICBO) is a maximum of 100nA. This device is suitable for applications in industrial and consumer electronics requiring robust switching and amplification capabilities. Packaged on tape and reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | E-Line-3, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 2V |
| Frequency - Transition | 240MHz |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 1 W |
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