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ZTX614QSTZ

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ZTX614QSTZ

PWR MID PERF TRANSISTOR EP3 AMMO

Manufacturer: Diodes Incorporated

Categories: Single Bipolar Transistors

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The Diodes Incorporated ZTX614QSTZ is an NPN Darlington bipolar transistor designed for demanding applications. This through-hole component, housed in an E-Line (TO-92 compatible) package, offers a 100V collector-emitter breakdown voltage and a maximum collector current of 800mA. It features a high DC current gain of 10000 minimum at 500mA and 5V, with a Vce saturation of 1.25V at 8mA and 800mA. The transistor dissipates up to 1W of power and operates within an extended temperature range of -55°C to 200°C. It is supplied in Tape & Box (TB) packaging. This device finds application in power management and general-purpose amplification circuits across various industrial sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: Tape & Box (TB)Datasheet:
Technical Details:
PackagingTape & Box (TB)
Package / CaseE-Line-3, Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature-55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.25V @ 8mA, 800mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 500mA, 5V
Frequency - Transition-
Supplier Device PackageE-Line (TO-92 compatible)
Current - Collector (Ic) (Max)800 mA
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max1 W

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