ZTX603STOA
TRANS NPN DARL 80V 1A E-LINEManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated ZTX603STOA is an NPN Darlington bipolar junction transistor designed for high gain applications. This component offers a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 1A. Featuring a minimum DC current gain (hFE) of 2000 at 1A and 5V, it provides substantial amplification. The transition frequency is rated at 150MHz, and it can dissipate up to 1W of power. The device is housed in an E-Line package (TO-92 compatible) with formed leads, suitable for through-hole mounting. It operates across a wide temperature range from -55°C to 200°C (TJ). This transistor finds utility in various industrial and consumer electronics applications requiring efficient switching and amplification. Packaged in Tape & Reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | E-Line-3, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 1mA, 1A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 1A, 5V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |
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