ZTX601QSTZ
PWR MID PERF TRANSISTOR EP3 AMMOManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated ZTX601QSTZ is an NPN Darlington bipolar transistor designed for high-performance applications. This device offers a collector-emitter breakdown voltage of 160 V and a continuous collector current capability of 1 A. With a transition frequency of 250 MHz and a maximum power dissipation of 1 W, the ZTX601QSTZ is suitable for power management and switching circuits. It features a high DC current gain (hFE) of 2000 minimum at 500mA and 10V, and a Vce saturation of 1.2V maximum at 10mA and 1A. The transistor is housed in an E-Line (TO-92 compatible) package, supplied in Tape & Box (TB) packaging. Operating temperature range is from -55°C to 200°C (TJ). This component finds application in various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | E-Line-3, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 10mA, 1A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 500mA, 10V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Power - Max | 1 W |
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