ZTX601BSTZ
TRANS NPN DARL 160V 1A E-LINEManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated ZTX601BSTZ is an NPN Darlington bipolar transistor designed for high gain applications. It features a maximum collector current of 1A and a collector-emitter breakdown voltage of 160V. With a transition frequency of 250MHz and a power dissipation of 1W, this device is suitable for use in power switching and amplification circuits. The minimum DC current gain (hFE) is rated at 10000 at 500mA and 10V. The saturation voltage (Vce Sat) is a maximum of 1.2V at 10mA and 1A. Packaged in an E-Line (TO-92 compatible) format with formed leads, this component is supplied in Cut Tape (CT). It operates across a temperature range of -55°C to 200°C (TJ). This transistor finds application in various industrial and consumer electronics sectors requiring robust switching capabilities.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | E-Line-3, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 10mA, 1A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 500mA, 10V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Power - Max | 1 W |
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