ZTX576
TRANS PNP 200V 1A E-LINEManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated ZTX576 is a PNP bipolar junction transistor (BJT) designed for through-hole mounting in an E-Line package, compatible with TO-92 footprints. This device offers a collector-emitter breakdown voltage (Vce(max)) of 200V and a continuous collector current (Ic(max)) capability of 1A. The ZTX576 exhibits a minimum DC current gain (hFE) of 50 at 300mA and 10V. Its transition frequency (fT) is rated at 100MHz, and it can dissipate up to 1W of power. Key electrical parameters include a collector cutoff current (Icbo) of 100nA maximum and a Vce(sat) of 300mV at 10mA base current and 100mA collector current. The operating junction temperature range is -55°C to 200°C. This transistor is suitable for applications in power switching and amplification circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | E-Line-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 300mA, 10V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 200 V |
| Power - Max | 1 W |
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