ZTX558QSTZ
PWR HI VOLTAGE TRANSISTOR EP3 AMManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
Quality Control: Learn More
Diodes Incorporated ZTX558QSTZ is a PNP bipolar junction transistor featuring a Darlington configuration. This component offers a 400 V collector-emitter breakdown voltage and a continuous collector current capability of 200 mA. With a transition frequency of 50 MHz and a maximum power dissipation of 1 W, it is suitable for applications requiring high voltage switching and amplification. The ZTX558QSTZ is qualified to AEC-Q101, indicating its suitability for automotive applications. It is supplied in an E-Line package with formed leads, compatible with TO-92 footprints, and packaged in Tape & Box (TB). The operating temperature range is from -55°C to 200°C. Key parameters include a minimum DC current gain (hFE) of 100 at 50 mA and 10 V, and a saturation voltage (Vce(sat)) of 500 mV at 6 mA and 50 mA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | E-Line-3, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 6mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 10V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 1 W |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
ZXTN19020CFFTA
TRANS NPN 20V 7A SOT23F
FMMT596QTA
SS Hi Voltage Transistor SOT23 T
DXTN03060BFG-7
PWR MID PERF TRANSISTOR POWERDI3
