ZTX555
TRANS PNP 150V 1A E-LINEManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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The Diodes Incorporated ZTX555 is a high-performance PNP bipolar junction transistor (BJT) designed for demanding applications. Featuring a 150V collector-emitter breakdown voltage and a continuous collector current rating of 1A, this device offers robust current handling capabilities. Its 100MHz transition frequency ensures efficient operation in high-frequency switching and amplification circuits. With a maximum power dissipation of 1W and a low saturation voltage of 300mV at 10mA/100mA, the ZTX555 minimizes heat generation and power loss. The transistor exhibits a minimum DC current gain (hFE) of 50 at 300mA and 10V, providing significant amplification. Packaged in a compatible E-Line (TO-92) form factor, it is suitable for through-hole mounting. This component finds application in various industrial and consumer electronics, including power supply regulation, motor control, and general-purpose amplification. The operating temperature range is -55°C to 200°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | E-Line-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 300mA, 10V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 1 W |
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