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ZTX455QSTZ

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ZTX455QSTZ

PWR MID PERF TRANSISTOR EP3 AMMO

Manufacturer: Diodes Incorporated

Categories: Single Bipolar Transistors

Quality Control: Learn More

Diodes Incorporated ZTX455QSTZ is an NPN bipolar junction transistor designed for robust performance in demanding applications. This through-hole component, housed in an E-Line (TO-92 compatible) package, offers a 140V collector-emitter breakdown voltage and a continuous collector current capability of 1A. It features a transition frequency of 100MHz and a maximum power dissipation of 1W. Key characteristics include a minimum DC current gain (hFE) of 100 at 150mA and 10V, and a saturation voltage (Vce Sat) of 700mV at 15mA base current and 150mA collector current. The device operates across a broad temperature range of -55°C to 200°C (TJ). Available in Tape & Box (TB) packaging, the ZTX455QSTZ is suitable for use in power management, industrial control, and consumer electronics sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: Tape & Box (TB)Datasheet:
Technical Details:
PackagingTape & Box (TB)
Package / CaseE-Line-3, Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic700mV @ 15mA, 150mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition100MHz
Supplier Device PackageE-Line (TO-92 compatible)
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)140 V
Power - Max1 W

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