ZTX455QSTZ
PWR MID PERF TRANSISTOR EP3 AMMOManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated ZTX455QSTZ is an NPN bipolar junction transistor designed for robust performance in demanding applications. This through-hole component, housed in an E-Line (TO-92 compatible) package, offers a 140V collector-emitter breakdown voltage and a continuous collector current capability of 1A. It features a transition frequency of 100MHz and a maximum power dissipation of 1W. Key characteristics include a minimum DC current gain (hFE) of 100 at 150mA and 10V, and a saturation voltage (Vce Sat) of 700mV at 15mA base current and 150mA collector current. The device operates across a broad temperature range of -55°C to 200°C (TJ). Available in Tape & Box (TB) packaging, the ZTX455QSTZ is suitable for use in power management, industrial control, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | E-Line-3, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 15mA, 150mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
| Power - Max | 1 W |
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