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ZTX451STOA

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ZTX451STOA

TRANS NPN 60V 1A E-LINE

Manufacturer: Diodes Incorporated

Categories: Single Bipolar Transistors

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Diodes Incorporated ZTX451STOA is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component offers a collector-emitter breakdown voltage of 60V and a continuous collector current capability of 1A. It features a transition frequency of 150MHz and a maximum power dissipation of 1W. The DC current gain (hFE) is a minimum of 50 at 150mA collector current and 10V collector-emitter voltage. Saturation voltage (Vce(sat)) is specified at a maximum of 350mV for a 15mA base current and 150mA collector current. The device exhibits a collector cutoff current (ICBO) of 100nA. The ZTX451STOA is housed in an E-Line (TO-92 compatible) through-hole package and is supplied on tape and reel. Typical industries utilizing this component include consumer electronics, industrial control, and telecommunications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseE-Line-3, Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic350mV @ 15mA, 150mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 150mA, 10V
Frequency - Transition150MHz
Supplier Device PackageE-Line (TO-92 compatible)
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max1 W

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