ZTX451STOA
TRANS NPN 60V 1A E-LINEManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated ZTX451STOA is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component offers a collector-emitter breakdown voltage of 60V and a continuous collector current capability of 1A. It features a transition frequency of 150MHz and a maximum power dissipation of 1W. The DC current gain (hFE) is a minimum of 50 at 150mA collector current and 10V collector-emitter voltage. Saturation voltage (Vce(sat)) is specified at a maximum of 350mV for a 15mA base current and 150mA collector current. The device exhibits a collector cutoff current (ICBO) of 100nA. The ZTX451STOA is housed in an E-Line (TO-92 compatible) through-hole package and is supplied on tape and reel. Typical industries utilizing this component include consumer electronics, industrial control, and telecommunications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | E-Line-3, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 15mA, 150mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 150mA, 10V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1 W |
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