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ZTX450QSTZ

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ZTX450QSTZ

PWR MID PERF TRANSISTOR EP3 AMMO

Manufacturer: Diodes Incorporated

Categories: Single Bipolar Transistors

Quality Control: Learn More

Diodes Incorporated ZTX450QSTZ is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 45V and a continuous collector current capability of 1A. With a maximum power dissipation of 1W and a transition frequency of 150MHz, it offers robust performance in demanding environments. The DC current gain (hFE) is a minimum of 100 at 150mA collector current and 10V collector-emitter voltage, with a saturation voltage (Vce(sat)) of 250mV at 15mA base current and 150mA collector current. The ZTX450QSTZ is housed in an E-Line (TO-92 compatible) package, suitable for through-hole mounting. It is supplied in Tape & Box packaging and operates across a wide temperature range from -55°C to 200°C (junction temperature). This device finds application in various industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: Tape & Box (TB)Datasheet:
Technical Details:
PackagingTape & Box (TB)
Package / CaseE-Line-3, Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic250mV @ 15mA, 150mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition150MHz
Supplier Device PackageE-Line (TO-92 compatible)
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)45 V
Power - Max1 W

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