ZTX415STZ
TRANS NPN 100V 0.5A E-LINEManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated ZTX415STZ is an NPN bipolar junction transistor designed for through-hole mounting. This avalanche mode device features a 100V collector-emitter breakdown voltage and a maximum collector current of 500mA. It offers a minimum DC current gain (hFE) of 25 at 10mA collector current and 10V Vce. The transition frequency is 40MHz, and the maximum power dissipation is 680mW. With a Vce(sat) of 500mV at 1mA base current and 10mA collector current, and a collector cutoff current (ICBO) of 100nA, this transistor is suitable for applications requiring reliable switching and amplification in industrial and consumer electronics. The ZTX415STZ is supplied in an E-Line package, compatible with TO-92 footprints, and is available in Tape & Box packaging. The operating junction temperature range is -55°C to 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | E-Line-3, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Avalanche Mode |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 10mA, 10V |
| Frequency - Transition | 40MHz |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 680 mW |
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