ZTX1051ASTZ
TRANS NPN 40V 4A E-LINEManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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The Diodes Incorporated ZTX1051ASTZ is an NPN bipolar junction transistor designed for high-performance applications. Featuring a collector-emitter breakdown voltage of 40V and a continuous collector current capability of 4A, this device is suitable for power switching and amplification tasks. Its transition frequency of 155MHz and a minimum DC current gain (hFE) of 300 at 1A, 2V ensure efficient operation. The ZTX1051ASTZ boasts a maximum power dissipation of 1W and a low saturation voltage of 210mV at 100mA, 4A. Packaged in an E-Line (TO-92 compatible) format with formed leads and supplied in Tape & Box, it facilitates through-hole mounting. This transistor is commonly utilized in industrial, automotive, and consumer electronics sectors requiring robust and reliable semiconductor solutions. The operating temperature range is -55°C to 200°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | E-Line-3, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 210mV @ 100mA, 4A |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1A, 2V |
| Frequency - Transition | 155MHz |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 1 W |
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