SDBN500B01-7
TRANS NPN 80V 0.5A SOT363Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated SDBN500B01-7 is an NPN bipolar junction transistor (BJT) with an isolated diode, suitable for applications requiring precise switching and amplification. This component features a collector-emitter breakdown voltage of 80V and a maximum continuous collector current of 500mA. The transistor exhibits a minimum DC current gain (hFE) of 100 at 50mA collector current and 1V collector-emitter voltage, with a transition frequency of 100MHz. Maximum power dissipation is rated at 200mW. The SDBN500B01-7 is supplied in a SOT-363 package, designed for surface mounting and delivered on tape and reel. Secondary breakdown current is 500mA. This device finds utility in various industrial and consumer electronics, including power management and signal conditioning circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN + Diode (Isolated) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 20mA, 200mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SOT-363 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 200 mW |
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