MMST4126-7-F
TRANS PNP 25V 0.2A SOT323Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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The Diodes Incorporated MMST4126-7-F is a PNP bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 25V and a maximum continuous collector current of 200mA. With a transition frequency of 250MHz and a minimum DC current gain (hFE) of 120 at 2mA and 1V, it is suitable for general-purpose amplification and switching circuits. The device dissipates a maximum power of 200mW and operates within an ambient temperature range of -55°C to 150°C. Packaged in a SOT-323 (SC-70) case, the MMST4126-7-F is commonly utilized in consumer electronics and industrial control systems. Saturation voltage at 5mA base current and 50mA collector current is specified at 400mV.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA, 1V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | SOT-323 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 200 mW |
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