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MMBT5401-7

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MMBT5401-7

BJT SOT23 150V PNP 0.25W 150C

Manufacturer: Diodes Incorporated

Categories: Single Bipolar Transistors

Quality Control: Learn More

Diodes Incorporated MMBT5401-7 is a PNP bipolar junction transistor (BJT) designed for surface mount applications. This AEC-Q101 qualified component offers a collector-emitter breakdown voltage of 150V and a continuous collector current capability of up to 600mA. Featuring a transition frequency of 300MHz and a maximum power dissipation of 300mW, it is suitable for demanding applications. The device is housed in a compact SOT-23-3 package. Key electrical characteristics include a minimum DC current gain (hFE) of 60 at 10mA, 5V and a maximum collector-emitter saturation voltage of 500mV at 5mA, 50mA. The operating temperature range is -55°C to 150°C. This component finds utility in automotive and general-purpose switching and amplification circuits.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 24 week(s)Product Status: DiscontinuedPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 5mA, 50mA
Current - Collector Cutoff (Max)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 10mA, 5V
Frequency - Transition300MHz
Supplier Device PackageSOT-23-3
GradeAutomotive
Current - Collector (Ic) (Max)600 mA
Voltage - Collector Emitter Breakdown (Max)150 V
Power - Max300 mW
QualificationAEC-Q101

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