FZT968TC
TRANS PNP 12V 6A SOT223-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated's FZT968TC is a PNP bipolar junction transistor designed for demanding applications. This surface mount component, housed in a SOT-223-3 package, offers a 12V collector-emitter breakdown voltage and a continuous collector current capability of 6A. Its high DC current gain (hFE) of 300 at 500mA and 1V, coupled with a transition frequency of 80MHz, makes it suitable for switching and amplification tasks. The maximum power dissipation is 3W, and it operates effectively across a temperature range of -55°C to 150°C. Key parameters include a Vce(sat) of 450mV at 250mA and 6A, and a low collector cutoff current of 10nA (ICBO). This device finds utility in various industrial and consumer electronics systems requiring robust performance.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 250mA, 6A |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 500mA, 1V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | SOT-223-3 |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
| Power - Max | 3 W |
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