FZT957TC
TRANS PNP 300V 1A SOT223-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated FZT957TC is a PNP bipolar junction transistor designed for robust performance in power switching and amplification applications. This device features a maximum collector-emitter breakdown voltage of 300V and a continuous collector current capability of 1A. With a power dissipation rating of 3W and a transition frequency of 85MHz, it is well-suited for use in power supplies, lighting control, and motor drive circuits. The transistor offers a minimum DC current gain (hFE) of 100 at 500mA and 10V, with a Vce(sat) of 240mV at 300mA and 1A for efficient operation. Packaged in a SOT-223-3 (TO-261-4, TO-261AA) surface mount format and supplied on tape and reel, the FZT957TC operates across a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 240mV @ 300mA, 1A |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 10V |
| Frequency - Transition | 85MHz |
| Supplier Device Package | SOT-223-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 3 W |
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