FZT956TC
TRANS PNP 200V 2A SOT223-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated FZT956TC is a PNP bipolar junction transistor designed for efficient power switching applications. This device features a 200V collector-emitter breakdown voltage and can handle a continuous collector current of up to 2A. With a maximum power dissipation of 3W, it is suitable for demanding operational environments. The transistor offers a transition frequency of 110MHz and a minimum DC current gain (hFE) of 100 at 1A collector current and 5V Vce. The saturated voltage Vce(sat) is specified at a maximum of 370mV with 300mA base current and 3A collector current. Packaged in a SOT-223-3 (TO-261-4, TO-261AA) surface-mount configuration, it is supplied on tape and reel. This component finds application in industrial control, power management, and general-purpose amplification circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 370mV @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 5V |
| Frequency - Transition | 110MHz |
| Supplier Device Package | SOT-223-3 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 200 V |
| Power - Max | 3 W |
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