FZT857TC
TRANS NPN 300V 3.5A SOT223-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated FZT857TC is an NPN bipolar junction transistor (BJT) designed for robust power switching applications. This surface-mount device, housed in a SOT-223-3 package (TO-261-4, TO-261AA), offers a maximum collector-emitter breakdown voltage of 300V and a continuous collector current capability of 3.5A. With a maximum power dissipation of 3W and a transition frequency of 80MHz, it is suitable for use in power supplies, lighting, and general-purpose amplification circuits. Key electrical parameters include a minimum DC current gain (hFE) of 100 at 500mA and 10V, and a saturation voltage (Vce(sat)) of 345mV at 600mA collector current. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 345mV @ 600mA, 3.5A |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 10V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | SOT-223-3 |
| Current - Collector (Ic) (Max) | 3.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 3 W |
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