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FZT855TC

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FZT855TC

TRANS NPN 150V 5A SOT223-3

Manufacturer: Diodes Incorporated

Categories: Single Bipolar Transistors

Quality Control: Learn More

Diodes Incorporated FZT855TC is an NPN bipolar junction transistor designed for high-power and high-voltage applications. This surface-mount component, packaged in a SOT-223-3 (TO-261-4, TO-261AA) enclosure, offers a maximum collector-emitter voltage (Vce) of 150 V and a continuous collector current (Ic) of 5 A. With a maximum power dissipation of 3 W and a transition frequency of 90 MHz, it is suitable for demanding switching and amplification tasks. The device exhibits a minimum DC current gain (hFE) of 100 at 1 A and 5 V, and a Vce(sat) of 355 mV at 500 mA and 5 A. Operating temperature range is from -55°C to 150°C. This transistor finds utility in power management, industrial control, and consumer electronics sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic355mV @ 500mA, 5A
Current - Collector Cutoff (Max)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1A, 5V
Frequency - Transition90MHz
Supplier Device PackageSOT-223-3
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)150 V
Power - Max3 W

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