FZT855TC
TRANS NPN 150V 5A SOT223-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated FZT855TC is an NPN bipolar junction transistor designed for high-power and high-voltage applications. This surface-mount component, packaged in a SOT-223-3 (TO-261-4, TO-261AA) enclosure, offers a maximum collector-emitter voltage (Vce) of 150 V and a continuous collector current (Ic) of 5 A. With a maximum power dissipation of 3 W and a transition frequency of 90 MHz, it is suitable for demanding switching and amplification tasks. The device exhibits a minimum DC current gain (hFE) of 100 at 1 A and 5 V, and a Vce(sat) of 355 mV at 500 mA and 5 A. Operating temperature range is from -55°C to 150°C. This transistor finds utility in power management, industrial control, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 355mV @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 5V |
| Frequency - Transition | 90MHz |
| Supplier Device Package | SOT-223-3 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 3 W |
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