FZT853TC
TRANS NPN 100V 6A SOT223-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated FZT853TC is a high-performance NPN bipolar junction transistor designed for demanding applications. This surface-mount device, housed in a SOT-223-3 package (TO-261-4, TO-261AA), offers a 100V collector-emitter breakdown voltage and a maximum collector current of 6A. It features a power dissipation of 3W and a transition frequency of 130MHz, making it suitable for power switching and amplification circuits. Key specifications include a minimum DC current gain (hFE) of 100 at 2A/2V and a saturation voltage (Vce(sat)) of 340mV at 500mA/5A. The device operates within a temperature range of -55°C to 150°C. This transistor finds use in various industrial and consumer electronics sectors that require robust power management solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 340mV @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A, 2V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | SOT-223-3 |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 3 W |
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