FZT851TC
TRANS NPN 60V 6A SOT223-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated FZT851TC is an NPN bipolar junction transistor designed for robust performance in demanding applications. This device offers a collector-emitter breakdown voltage of 60V and a continuous collector current capability of up to 6A. With a maximum power dissipation of 3W and a transition frequency of 130MHz, it is suitable for various switching and amplification tasks. Key specifications include a saturation voltage of 375mV at 300mA collector current and 6A, and a minimum DC current gain (hFE) of 100 at 2A and 1V. The transistor features a low collector cutoff current of 50nA (ICBO). Packaged in a SOT-223-3 (TO-261-4, TO-261AA) surface-mount configuration, it operates within a temperature range of -55°C to 150°C. This component finds application in power management, industrial control, and general-purpose amplification circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 375mV @ 300mA, 6A |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A, 1V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | SOT-223-3 |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 3 W |
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