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FZT851TC

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FZT851TC

TRANS NPN 60V 6A SOT223-3

Manufacturer: Diodes Incorporated

Categories: Single Bipolar Transistors

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Diodes Incorporated FZT851TC is an NPN bipolar junction transistor designed for robust performance in demanding applications. This device offers a collector-emitter breakdown voltage of 60V and a continuous collector current capability of up to 6A. With a maximum power dissipation of 3W and a transition frequency of 130MHz, it is suitable for various switching and amplification tasks. Key specifications include a saturation voltage of 375mV at 300mA collector current and 6A, and a minimum DC current gain (hFE) of 100 at 2A and 1V. The transistor features a low collector cutoff current of 50nA (ICBO). Packaged in a SOT-223-3 (TO-261-4, TO-261AA) surface-mount configuration, it operates within a temperature range of -55°C to 150°C. This component finds application in power management, industrial control, and general-purpose amplification circuits.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic375mV @ 300mA, 6A
Current - Collector Cutoff (Max)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 2A, 1V
Frequency - Transition130MHz
Supplier Device PackageSOT-223-3
Current - Collector (Ic) (Max)6 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max3 W

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