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FZT849TC

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FZT849TC

TRANS NPN 30V 7A SOT223-3

Manufacturer: Diodes Incorporated

Categories: Single Bipolar Transistors

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Diodes Incorporated FZT849TC is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 30V and can handle a continuous collector current of up to 7A. It features a maximum power dissipation of 3W and a transition frequency of 100MHz. The DC current gain (hFE) is a minimum of 100 at 1A and 1V, with a Vce saturation of 350mV maximum at 300mA collector current and 6.5A collector current. The collector cutoff current (ICBO) is a maximum of 50nA. Packaged in a SOT-223-3 (TO-261-4, TO-261AA) surface mount package, this transistor is suitable for use in power management, motor control, and general switching applications across various industrial and consumer electronics sectors. It operates within an ambient temperature range of -55°C to 150°C. The component is supplied on a tape and reel for automated assembly.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic350mV @ 300mA, 6.5A
Current - Collector Cutoff (Max)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1A, 1V
Frequency - Transition100MHz
Supplier Device PackageSOT-223-3
Current - Collector (Ic) (Max)7 A
Voltage - Collector Emitter Breakdown (Max)30 V
Power - Max3 W

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