FZT757TC
TRANS PNP 300V 0.5A SOT223-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated FZT757TC is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 300V and a continuous collector current capability of 500mA. The DC current gain (hFE) is a minimum of 50 at 100mA collector current and 5V collector-emitter voltage. With a transition frequency of 30MHz, it is suitable for moderate frequency operations. The device dissipates a maximum of 2W and has a Vce saturation of 500mV at 10mA base current and 100mA collector current. Packaged in a SOT-223-3 (TO-261-4, TO-261AA) surface-mount format, it operates across a temperature range of -55°C to 150°C. This transistor finds use in power supplies, lighting control, and industrial automation systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 100mA, 5V |
| Frequency - Transition | 30MHz |
| Supplier Device Package | SOT-223-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 2 W |
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