FZT755TC
TRANS PNP 150V 1A SOT223-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated FZT755TC is a PNP bipolar junction transistor designed for demanding applications. This device features a 150V collector-emitter breakdown voltage (V(BR)CEO) and a continuous collector current (IC) capability of 1A. With a transition frequency (fT) of 30MHz, it is suitable for signal amplification and switching tasks. The device exhibits a minimum DC current gain (hFE) of 50 at 500mA and 5V, and a VCE(SAT) of 500mV at 200mA and 1A. The maximum power dissipation is 2W. Packaged in a SOT-223-3 (TO-261-4) surface-mount format, it operates across a temperature range of -55°C to 150°C. This component finds application in power management, industrial control, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 500mA, 5V |
| Frequency - Transition | 30MHz |
| Supplier Device Package | SOT-223-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 2 W |
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