FZT694BTC
TRANS NPN 120V 1A SOT223-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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The Diodes Incorporated FZT694BTC is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 120V and a continuous collector current capability of 1A. With a maximum power dissipation of 2W and a transition frequency of 130MHz, it is suitable for various switching and amplification tasks. The device exhibits a minimum DC current gain (hFE) of 150 at 400mA and 2V, and a Vce saturation of 500mV at 5mA and 400mA. Its SOT-223-3 package facilitates integration into compact electronic assemblies. Typical applications include power management, general-purpose amplification, and switching circuits within industrial controls and consumer electronics. The operating temperature range is from -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 400mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 400mA, 2V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | SOT-223-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 2 W |
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