FZT688BTC
TRANS NPN 12V 4A SOT223-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated FZT688BTC is a high-performance NPN bipolar junction transistor (BJT) designed for demanding applications. This surface-mount device, supplied in a SOT-223-3 package, offers a collector-emitter breakdown voltage of 12V and a continuous collector current capability of up to 4A. With a maximum power dissipation of 2W and a transition frequency of 150MHz, it is suitable for various switching and amplification tasks. The transistor exhibits a minimum DC current gain (hFE) of 400 at 3A and 2V, and a Vce(sat) of 400mV at 4A collector current driven by 50mA base current. Operating temperature range is from -55°C to 150°C. This component finds utility in power management, automotive electronics, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 4A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 400 @ 3A, 2V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | SOT-223-3 |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
| Power - Max | 2 W |
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