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FZT658TC

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FZT658TC

TRANS NPN 400V 0.5A SOT223-3

Manufacturer: Diodes Incorporated

Categories: Single Bipolar Transistors

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Diodes Incorporated FZT658TC is a high-voltage NPN bipolar junction transistor designed for demanding applications. This SOT-223-3 packaged device features a maximum collector-emitter breakdown voltage of 400V and a continuous collector current capability of 500mA. With a power dissipation of 2W and a transition frequency of 50MHz, it is suitable for power switching and amplification tasks. The transistor exhibits a minimum DC current gain (hFE) of 40 at 200mA and 10V, with a Vce(sat) of 500mV at 10mA collector current and 100mA base current. The low collector cutoff current of 100nA (ICBO) ensures efficient operation. Operating temperature ranges from -55°C to 150°C. This component is commonly utilized in power supplies, lighting control, and general-purpose amplification circuits. The component is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 9 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 10mA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 200mA, 10V
Frequency - Transition50MHz
Supplier Device PackageSOT-223-3
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)400 V
Power - Max2 W

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