FZT657TC
TRANS NPN 300V 0.5A SOT223-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated FZT657TC is a high-voltage NPN bipolar junction transistor (BJT) designed for robust switching and amplification applications. This component offers a collector-emitter breakdown voltage of 300V and a continuous collector current capability of 500mA. With a transition frequency of 30MHz and a maximum power dissipation of 2W, it is suitable for demanding power management circuits. The device features a low saturation voltage of 500mV at 100mA collector current and 10mA base current, ensuring efficient operation. The DC current gain (hFE) is a minimum of 50 at 100mA collector current and 5V collector-emitter voltage. Packaged in a SOT-223-3 (TO-261-4, TO-261AA) surface-mount configuration and supplied on tape and reel, the FZT657TC operates across a wide temperature range of -55°C to 150°C. Typical industries utilizing this transistor include industrial control and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 100mA, 5V |
| Frequency - Transition | 30MHz |
| Supplier Device Package | SOT-223-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 2 W |
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